Solid mechanics and material strength studies on the melt growth of bulk single crystals are important for understanding and solving problems related to the generation and multiplication of dislocations and the cracking of single crystals.Īs for the melt growth of bulk single crystals, attention has been paid to heat transfer problems in a crystal growth furnace, and several review papers have been published to date (see also Chapter 20 in Vol. Single crystals with cracking cannot be used as materials for devices due to their reduced productivity. In the case of oxide single crystals, even cracking may result. Such thermal stress causes the multiplication of dislocations that affect the performance of electronic/optical devices. Because the melt growth of a bulk single crystal is carried out under severe and complex thermal conditions, large thermal stress is induced in a bulk single crystal during the growth process. Their bulk single crystals are usually manufactured using melt growth methods, such as the Czochralski (CZ) method, Bridgman (BR) method, and floating zone (FZ) method. Various single crystals, such as semiconductor single crystals (e.g., Si, GaAs, InP) and oxide single crystals (e.g., LiNbO 3, LiTaO 3, Al 2O 3) are used as materials for electronic/optical devices. Noriyuki Miyazaki, in Handbook of Crystal Growth: Bulk Crystal Growth (Second Edition), 2015 26.1 Overview

Import .dmg to singlecrystal